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APT6013JFLL
600V 39A 0.130
POWER MOS MOS 7 POWER 7 FREDFET
R
TM
S G D
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
(R)
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT6013JFLL UNIT Volts Amps
600 39 156 30 40 460 3.68 -55 to 150 300 39 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
600 0.130 250 1000 100 3 5
(VGS = 10V, ID = 19.5A)
Ohms A nA Volts
8-2004 050-7070 Rev B
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol C iss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT6013JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 39A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 300V ID = 39A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 400V, VGS = 15V ID = 39A, RG = 5 ID = 39A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
5630 1060 70 130 25 40 11 13 27 9 575 530 935 630
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
39 156 1.3 15
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -39A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -39A, di/dt = 100A/s) Reverse Recovery Charge (IS = -39A, di/dt = 100A/s) Peak Recovery Current (IS = -39A, di/dt = 100A/s) Characteristic Junction to Case Junction to Ambient
250 500 2.27 6.87 14 22
TYP MAX
THERMAL CHARACTERISTICS
Symbol RJC RJA UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
0.30
, THERMAL IMPEDANCE (C/W)
4 Starting Tj = +25C, L = 3.29mH, RG = 25, Peak IL = 39A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID39A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and inforation contained herein.
0.25 0.20 0.15 0.10 0.05 0
0.9
0.7
0.5 Note: 0.3
PDM t1 t2
8-2004
050-7070 Rev B
JC
Z
0.1 0.05 10-5 10-4 SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1
Typical Performance Curves
120
Junction temp. (C) RC MODEL
APT6013JFLL
VGS =15 &10V 8V
0.0260
0.0012F
ID, DRAIN CURRENT (AMPERES)
100 80 60 40
7V
Power (watts)
0.0584
0.0354F
6.5V
0.185 Case temperature. (C)
0.463F
6V 20 0 5.5V 5V
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 160 140
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.2
V
1.15 1.10 1.05 1.00 0.95 0.90
GS
NORMALIZED TO = 10V @ I = 19.5A
D
120 100 80 60 40 20 0 TJ = +125C TJ = +25C
VGS=10V
VGS=20V
TJ = -55C
01 23 456 78 9 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
40 35
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
30 25 20 10 15 5 0 25
1.10
1.05
1.00
0.95
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5
I
D
0.90 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50
= 19.5A = 10V
V
GS
2.0
1.5
1.0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
0.5
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7070 Rev B
8-2004
156
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT6013JFLL
Ciss
C, CAPACITANCE (pF)
1,000
Coss
10
100S 1mS TC =+25C TJ =+150C SINGLE PULSE 1 10mS
100
Crss
1
10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
= 39A
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 200 100
10 0
12 VDS= 120V 8 VDS= 300V VDS= 480V
TJ =+150C TJ =+25C 10
4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 100 td(off) 80
0
0
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 120
V
DD G
= 400V
R
= 5
100 80
tr and tf (ns)
T = 125C
J
L = 100H V
DD G
td(on) and td(off) (ns)
= 400V
60
R
= 5
T = 125C
J
L = 100H
60 40
tf
40 td(on)
tr
20
20 0 10
0 10
40 50 60 70 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
DD G
20
30
40 50 60 70 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 3000 2500
SWITCHING ENERGY (J)
V I
DD
20
30
2000
V
= 400V
= 400V
R
= 5
D J
= 39A
1600
Eon and Eoff (J)
T = 125C
J
T = 125C L = 100H E ON includes diode reverse recovery
L = 100H E ON includes diode reverse recovery
Eoff
2000 1500
1200
800 Eon 400 Eoff
Eon 1000 500 0
050-7070 Rev B
8-2004
0 10
40 50 60 70 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
20
30
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
5
APT6013JFLL
90% 10% Gate Voltage TJ125C TJ125C
Gate Voltage
td(off)
90% Drain Current 90% Drain Voltage
td(on) tr
5% 10% Switching Energy 5% Drain Voltage
tf
10% 0 Switching Energy Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
ID
V DS
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7070 Rev B
8-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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